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Fabrication of metal-nanoparticle-modified semiconducting copper--and silver--TCNQ materials as substrates for the reduction of chromium (VI) using thiosulfate ions at ambient temperature

机译:金属-纳米粒子改性的铜和银的TCNQ半导体材料的制备,用于在环境温度下使用硫代硫酸根离子还原铬(VI)

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摘要

The formation of readily recoverable and reusable organic semiconducting Cu- and AgTCNQ (TCNQ=7,7,8,8-tetracyanoquinodimethane) microstructures decorated with Pt and Pd metallic nanoparticles is described for the effective reduction of CrVI ions in aqueous solution at room temperature using both formic acid and an environmentally friendly thiosulfate reductant. The M-TCNQ (M=metal) materials were formed by electrocrystallisation onto a glassy carbon surface followed by galvanic replacement in the presence of H2PtCl6 or PdCl2 to form the composite material. It was found that loading of the surface with nanoparticles could easily be controlled by changing the metal salt concentration. Significantly, the M-TCNQ substrates facilitated the formation of well-isolated metal nanoparticles on their surfaces under appropriate galvanic replacement conditions. The semiconductor–metal nanoparticle combination was also found to be critical to the catalyst performance, wherein the best-performing material was CuTCNQ modified by well-isolated Pt nanoparticles with both formic acid and thiosulfate ions as the reductant.
机译:描述了用Pt和Pd金属纳米粒子修饰的易于恢复和可重复使用的有机半导体Cu-和AgTCNQ(TCNQ = 7,7,8,8-四氰基对二甲烷)微结构的形成,用于在室温下使用水溶液有效还原水溶液中的CrVI离子既是甲酸又是环保的硫代硫酸盐还原剂。通过在玻璃碳表面上进行电结晶,然后在H2PtCl6或PdCl2的存在下进行电流置换,形成M-TCNQ(M =金属)材料,以形成复合材料。发现通过改变金属盐浓度可以容易地控制纳米粒子在表面上的负载。重要的是,在适当的电置换条件下,M-TCNQ基材有助于在其表面上形成良好隔离的金属纳米颗粒。还发现半导体-金属纳米颗粒的组合对于催化剂的性能至关重要,其中性能最佳的材料是CuTCNQ,它是通过充分分离的Pt纳米颗粒进行改性的,其中甲酸和硫代硫酸盐离子均作为还原剂。

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