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Dependence of domain wall pinning potential landscapes on domain wall chirality and pinning site geometry in planar nanowires.

机译:畴壁钉扎潜在景观对平面纳米线中畴壁手性和钉扎位点几何形状的依赖性。

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摘要

We report on domain wall pinning behavior and the potential-energy landscapes created by notches of two different geometries in planar Permalloy nanowires. Domain wall depinning was probed experimentally using spatially resolved magneto-optical Kerr effect measurements. The spin structure of pinned domain walls was determined using Lorentz microscopy, and domain wall pinning behavior was also analyzed using micromagnetic simulations, which are in good qualitative agreement with experimental results. All notch structures have dimensions that are comparable with the domain wall length scales. For the notch structures investigated, the depinning field experienced by a domain wall is found to be relatively insensitive to notch geometry although the pinning behavior is highly sensitive to both the wall type and the wall chirality spin structure. Energetically, the notches present both potential barriers and/or potential wells depending on the micromagnetic structure of the domain wall, and we find that the chirality of the domain wall is a key determinant of the pinning potential landscape. The pinning behavior of domain walls is discussed in detail, and direct quantitative measurements of the width and depth of the potential wells and/or barriers responsible for domain wall pinning are given for vortex walls pinned in triangular and rectangular notches.
机译:我们报告了畴壁的钉扎行为和由平面坡莫合金纳米线中两个不同几何形状的缺口创建的势能态势。使用空间分辨的磁光Kerr效应测量,对畴壁去钉化进行了实验研究。使用Lorentz显微镜确定了固定畴壁的自旋结构,并且还使用微磁模拟分析了畴壁的钉扎行为,这与实验结果具有很好的定性一致性。所有槽口结构的尺寸都可以与畴壁长度尺度相媲美。对于所研究的缺口结构,发现畴壁经历的钉扎场对缺口几何形状相对不敏感,尽管钉扎行为对壁类型和壁手性自旋结构都高度敏感。从能量上说,这些缺口根据畴壁的微磁结构同时呈现势垒和/或势阱,并且我们发现畴壁的手性是钉扎势态的关键决定因素。详细讨论了畴壁的钉扎行为,并对钉在三角形和矩形凹口中的涡旋壁给出了对可能的阱和/或负责畴壁钉扎的势垒的宽度和深度的直接定量测量。

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