Solution-processed SiO2 gate insulator formed at low temperature for zinc oxide thin-film transistors.

摘要

We report on the low-temperature formation (180 °C) of a SiO2 dielectric layer from solution-processed perhydropolysilazane. A bottom-gate zinc oxide thin-film transistor has subsequently been fabricated that possesses a carrier mobility of 3 cm2 V s−1, an on/off ratio of 107 and minimal hysteresis in its transfer and output characteristics.