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Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications

机译：用于肖特基接触应用的Ti / Er叠层形成硅化er的透射电子显微镜研究

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Ratajczak J.; Laszcz A.; Czerwinski A.; Katcki J.; Phillipp F.; Van Aken P.A.; Reckinger N.; Dubois E.;
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年度 2010
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正文语种 eng
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1. Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications [J] . J. RATAJCZAK, A. LASZCZ, A. CZERWINSKI Journal of Microscopy . 2010,第3期

机译：用于肖特基接触应用的Ti / Er叠层形成硅化er的透射电子显微镜研究
2. Transmission electron microscopy characterization of the erbium silicide formation process using a Pt/Er stack on a silicon-on-insulator substrate [J] . Laszcz A, Katcki J, Ratajczak J, Journal of Microscopy . 2006,第Pta1期

机译：绝缘体上硅衬底上使用Pt / Er叠层的硅化形成过程的透射电子显微镜表征
3. Transmission electron microscopy of iridium silicide contacts for advanced MOSFET structures with Schottky source and drain [J] . A. Laszcz, J. Katcki, J. Ratajczak Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2004,第1a2期

机译：具有肖特基源极和漏极的高级MOSFET结构的硅化铱触点的透射电子显微镜
4. Transmission electron microscopy characterisation of Ti and Al/Ti contacts on GaN and AlGaN/GaN [C] . B Van Daele, G Van Tendeloo, W Ruythooren, Conference on Microscopy of Semiconducting Materials . 2005

机译：GaN和Algan / GaN上Ti和Al / Ti触点的透射电子显微镜表征
5. Exploratory investigation of erbium silicide NMOS as a candidate for a Schottky barrier CMOS process [D] . Faulkner, Carl McCarty 2001

机译：硅化N NMOS作为肖特基势垒CMOS工艺候选者的探索性研究
6. Soft x-ray reflectometry hard x-ray photoelectron spectroscopy and transmission electron microscopy investigations of the internal structure of TiO2(Ti)/SiO2/Si stacks [O] . Elena O Filatova, Igor V Kozhevnikov, Andrey A Sokolov, 2012

机译：TiO2（Ti）/ SiO2 / Si叠层内部结构的软X射线反射法硬X射线光电子能谱和透射电子显微镜研究
7. Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications [O] . Ratajczak J., Laszcz A., Czerwinski A., 2010

机译：用于肖特基接触应用的Ti / Er叠层形成硅化er的透射电子显微镜研究
8. Carbon nanotube Schottky diodes using Ti-Schottky and Pt-ohmic contacts for high frequency applications [R] . Manohara, Harish M., Wong, Eric W., Schlecht, Erich, 2005

机译：碳纳米管肖特基二极管，采用Ti-schottky和pt欧姆触点，适用于高频应用

Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications

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