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Dosimetry of very high energy electrons (VHEE) for radiotherapy applications : using radiochromic film measurements and Monte Carlo simulations

机译:用于放射治疗的极高能量电子(VHEE)的剂量测定法:使用放射致变色膜测量和蒙特卡洛模拟

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摘要

Very high energy electrons (VHEE) in the range from 100-250 MeV have the potential of becoming an alternative modality in radiotherapy because of their improved dosimetry properties compared with MV photons from contemporary medical linear accelerators. Due to the need for accurate dosimetry of small field size VHEE beams we have performed dose measurements using EBT2 Gafchromic® film. Calibration of the film has been carried out for beams of two different energy ranges: 20 MeV and 165 MeV from conventional radio frequency linear accelerators. In addition, EBT2 film has been used for dose measurements with 135 MeV electron beams produced by a laser-plasma wakefield accelerator. The dose response measurements and percentage depth dose profiles have been compared with calculations carried out using the general-purpose FLUKA Monte Carlo (MC) radiation transport code. The impact of induced radioactivity on film response for VHEEs has been evaluated using the MC simulations. A neutron yield of the order of 10-5 neutrons cm-2 per incident electron has been estimated and induced activity due to radionuclide production is found to have a negligible effect on total dose deposition and film response. Neutron and proton contribution to the equivalent doses are negligible for VHEE. The study demonstrates that EBT2 Gafchromic film is a reliable dosimeter that can be used for dosimetry of VHEE. The results indicate an energy-independent response of the dosimeter for 20 MeV and 165 MeV electron beams and has been found to be suitable for dosimetry of VHEE.
机译:与现代医学线性加速器的MV光子相比,100-250 MeV范围内的超高能量电子(VHEE)具有提高放射线剂量学性质的潜力,有望成为放射治疗的替代方式。由于需要精确测量小视场尺寸VHEE光束的剂量,我们使用EBT2Gafchromic®薄膜进行了剂量测量。已经针对两种不同能量范围的光束进行了膜的校准:来自常规射频线性加速器的20 MeV和165 MeV。此外,EBT2膜已用于通过激光等离子尾波加速器产生的135 MeV电子束进行剂量测量。已将剂量响应测量值和深度剂量百分比分布图与使用通用FLUKA蒙特卡洛(MC)辐射传输代码进行的计算进行了比较。使用MC模拟已经评估了VHEE的放射性对薄膜响应的影响。已估计每个入射电子的中子产率约为10-5个中子cm-2,并且发现由于放射性核素产生引起的诱导活性对总剂量沉积和薄膜响应的影响可忽略不计。 VHEE对等效剂量的中子和质子贡献可忽略不计。该研究表明,EBT2全色薄膜是一种可靠的剂量计,可用于VHEE剂量测定。结果表明剂量计对20 MeV和165 MeV电子束的能量无关响应,并且已发现适用于VHEE的剂量测定。

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