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Dielectronic recombination data for dynamic finite-density plasmas : XIV. The aluminium isoelectronic sequence

机译:动态有限密度等离子体的双电子复合数据:XIV。铝等电子序列

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Context. A comprehensive study of dielectronic recombination (DR) for the aluminum-like isoelectronic sequence has been completed. Aims. Total and final-state resolved DR rate coefficients for the ground and metastable initial levels of 17 ions between Si ii and Zn xviii are presented. Methods. Within an isolated-resonance, distorted-wave (IPIRDW) approximation, multiconfiguration Breit-Pauli (MCBP) calculations are carried out for the total and partial DR rate coefficients of Al-like ions. Both Δnc = 0 and Δnc = 1 core-excitations are included, using LS-coupled and intermediate-coupling (IC) schemes. Results. The inaccuracies of earlier empirical data and/or LS-coupling calculations, particularly at lower temperatures characteristic of photoionized plasmas, is demonstrated by comparison with present, state-of-the-art IC DR rate coefficients. Fine-structure effects are found to increase the DR rate coefficient at low temperatures and decrease it at high temperatures, rendering earlier LS calculations incomplete. Good agreement is found between present IC results and experimental measurements.
机译:上下文。铝的等电子序列的双电子复合(DR)的综合研究已经完成。目的给出了Si ii和Zn xviii之间17个离子的初始水平和亚稳态初始水平的总和最终状态的DR速率系数。方法。在隔离共振,失真波(IPIRDW)近似中,对Al类离子的全部和部分DR速率系数进行了多配置Breit-Pauli(MCBP)计算。使用LS耦合和中间耦合(IC)方案,都包括Δnc= 0和Δnc= 1核心激励。结果。通过与当前最新的IC DR速率系数进行比较,可以证明较早的经验数据和/或LS耦合计算的不准确性,尤其是在较低温度下具有光电离等离子体特性的情况下。发现精细结构效应会增加低温下的DR速率系数,而在高温下会降低它,从而使早期的LS计算不完整。在目前的IC结果和实验测量结果之间找到了很好的一致性。

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