Transfer printing of semiconductor nanowires with lasing emission for controllable nanophotonic device fabrication

摘要

Accurate positioning and organization of Indium Phosphide (InP) Nanowires (NW) with lasing emission at room temperature is achieved using a nanoscale Transfer Printing (TP) technique. The NWs retained their lasing emission after their transfer to targeted locations on different receiving substrates (e.g. polymers, silica and metal surfaces). The NWs were also organized into complex spatial patterns, including 1D and 2D arrays, with a controlled number of elements and dimensions. The developed TP technique enables the fabrication of bespoke nanophotonic systems using NW lasers and other NW devices as building blocks.