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The influence of probe lift-up height on CNT electrical properties measurement under EFM DC mode

机译:探针提起高度对EFM DC模式下CNT电性能测量的影响

摘要

Nowadays, one of the bottlenecks which hinder the development and application of carbon nanotube (CNT) nano device is that no pure semiconducting CNT (s-CNT) or metallic CNT (m-CNT) can be obtained, and for solving this problem scientists proposed some methods on preparation or separation, but all the results still should be detected and feedback to the process for further improving the preparation and separation methods. Thus, it is very important to measure and distinguish the electrical properties of CNT. For that, scientists proposed a method to measure CNT electrical properties based on DC electrostatic force microscope (EFM) mode, which distinguishes m-CNT from s-CNT according to different scan line shape to CNT with different electrical properties. But, we discovered that the probe lift-up height will seriously affect the shape of the scan line, which makes this method not reliable in distinguishing m-CNT from s-CNT. In this paper, the authors deeply researched the influence of probe lift-up height and also gave corresponding theoretical analysis and explanation, which will greatly improve the method of detecting CNT electrical properties by EFM.
机译:如今,阻碍碳纳米管(CNT)纳米器件发展和应用的瓶颈之一是无法获得纯的半导体CNT(s-CNT)或金属CNT(m-CNT),为解决这个问题,科学家提出了一些制备或分离方法,但仍应检测所有结果,并将其反馈给过程以进一步改进制备和分离方法。因此,测量和区分CNT的电性能非常重要。为此,科学家提出了一种基于直流静电力显微镜(EFM)模式的测量CNT电性能的方法,该方法根据扫描线的形状将m-CNT与s-CNT区别为具有不同电性能的CNT。但是,我们发现探针的抬起高度会严重影响扫描线的形状,这使得该方法在区分m-CNT和s-CNT方面不可靠。本文作者对探针提起高度的影响进行了深入的研究,并给出了相应的理论分析和解释,这将大大改善EFM检测CNT电性能的方法。

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