Semiconductor Type Dependent Comparison of Electrical Characteristics of Pt/InP Structures Fabricated by Magnetron Sputtering Technique in the Range of 20-400 K.

摘要

The paper describes how electrical properties of Pt/InP Schottky diode were affected by semiconductorudtype. We fabricated Pt/p-InP and Pt/n-InP Schottky diodes and measured electrical characteristicsudfrom 20 K to 400 K. Thicknesses of less than 30 nm of platinum were deposited on the two types of indiumudphosphide substrates using magnetron sputtering technique after the creation of Zn-Au ohmic back contact.udWe discussed basic diode parameters of idealiy factors, barrier heights and serries resistances of the two typeudof contacts. Additionly, unusual temperature characteristics of the the diodes were highlighted. These resultsudwere evaluated in terms of semiconductor type comparision of Pt/InP Schottky structures.