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Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy

机译:选择性区域金属有机气相外延法无催化剂生长GaAs纳米线

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摘要

We report on the fabrication of GaAs hexagonal nanowires surrounded by (110) vertical facets on a GaAs (111) B substrate using selective-area (SA) metalorganic vapor-phase epitaxial (MOVPE) growth. The substrate for SA growth was partially covered with thin SiO2, and a circular mask opening with a diameter d0 of 50–200 nm was defined. After SA-MOVPE, GaAs nanowires with a typical diameter d ranging from 50 to 200 nm and a height from 2 to 9 mm were formed vertically on the substrate without any catalysts. The size of the nanowire depends on the growth conditions and the opening size of the masked substrate. A possible growth mechanism is also discussed
机译:我们报道了使用选择性区域(SA)金属有机气相外延(MOVPE)生长在GaAs(111)B衬底上被(110)垂直小平面包围的GaAs六角形纳米线的制造。用于SA生长的衬底部分覆盖有薄SiO2,并定义了直径d0为50-200 nm的圆形掩模开口。在SA-MOVPE之后,在没有任何催化剂的情况下在衬底上垂直地形成典型直径d在50至200nm范围内且高度在2至9mm范围内的GaAs纳米线。纳米线的尺寸取决于生长条件和被掩膜衬底的开口尺寸。还讨论了可能的增长机制

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