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Development of a double-pole double-throw radio frequency micro electro-mechanical systems switch using an ‘S’ shaped pivot

机译:使用“ S”形枢轴开发双刀双掷射频微机电系统开关

摘要

This paper investigates the design of a novel pivot for a seesaw, RF MEMS, double-pole double-throw (DPDT) switch, which has been developed to operate within mobile communication systems and devices. The pivot employs a unique ‘S’ structure at the nano scale, in the form of a, which helps to keep von-Mises stresses below 21 MPa. The pivot requires less pulling force than similar designs due to its flexibility which allows the beam and contacts a greater space of separation while the switch is off. This in turn results in improved contact isolation of greater than −77 dB at 5 GHz. The RF MEMS switch is an improvement over the previously published paper (Al-Amin et al. in International symposium on microelectronics, vol 2013, no 1, pp 000831–000835, 2013. doi:10.1109/ECS.2014.6892558), since the pulling force of the electrostatic plates can be generated with a voltage which is greatly reduced from 14 to 8 V using the same electrostatic plate area size. The switch is a progression from SPST and DPDT seesaw switching since it provides improved flexibility over the previously described devices. With the redesign of the pivot the switch attains a greater ‘air-gap’ between the contacts when open-circuited which therefore allows for improved isolation during the off-state.
机译:本文研究了用于跷跷板,RF MEMS,双刀双掷(DPDT)开关的新型支点的设计,该支点已开发用于在移动通信系统和设备中运行。枢轴采用纳米形式的独特“ S”结构,其形式为a,有助于将von-Mises应力保持在21 MPa以下。与类似的设计相比,枢轴所需的拉力更小,因为它具有柔韧性,可以在开关断开时使光束和较大的接触空间分开。这进而导致在5 GHz时改善的接触隔离大于-77 dB。自上次发表以来,RF MEMS开关是对先前发表的论文(Al-Amin等人在国际微电子研讨会上,2013年,第1期,第000831–000835页,doi:10.1109 / ECS.2014.6892558)的改进。使用相同的静电板面积大小,可以通过将电压从14 V大大降低到8 V来产生静电板的最大力。该开关是SPST和DPDT跷跷板开关的改进产品,因为它比以前描述的设备具有更高的灵活性。通过重新设计枢轴,开路时,开关在触点之间获得了更大的“气隙”,因此可以在断开状态下改善隔离度。

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