The orientation dependence of the piezoresistive effect of p-type single crystalline 3C-SiC thin film grown on a (100)Si wafer was characterized. The longitudinal, transverse gauge factors in [100] orientation, and longitudinal gauge factor in [110] orientation were found to be 5.8, 5.2, and 30.3, respectively. The fundamental piezoresistive coefficients p11, p12, and p44 of p-type 3C-SiC were obtained to be 1.5 10 11 Pa 1, 1.4 10 11 Pa 1, and 18.1 10 11 Pa 1, respectively. From these coefficients, the piezoresistive effect in any crystallographic orientation in p-type single crystalline 3C-SiC can be estimated, which is very valuable in designing micro-mechanical sensors.
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机译:表征了在(100)Si晶片上生长的p型单晶3C-SiC薄膜的压阻效应的取向依赖性。发现在[100]方向上的纵向,横向尺寸系数和在[110]方向上的纵向尺寸系数分别为5.8、5.2和30.3。 p型3C-SiC的基本压阻系数p11,p12和p44分别为1.5 10 11 Pa 1、1.4 10 11 Pa 1和18.1 10 11 Pa 1。根据这些系数,可以估算出p型单晶3C-SiC中任何晶体取向的压阻效应,这在设计微机械传感器中非常有价值。
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