We report the high-frequency modulation of individual pixels in 8 x 8 arrays of III-nitride-based micro-pixellated light-emitting diodes, where the pixels within the array range from 14 to 84 mu m in diameter. The peak emission wavelengths of the devices are 370, 405, 450 and 520 nm, respectively. Smaller area micro-LED pixels generally exhibit higher modulation bandwidths than their larger area counterparts, which is attributed to their ability to be driven at higher current densities. The highest optical -3 dB modulation bandwidths from these devices are shown to be in excess of 400 MHz, which, to our knowledge, are the highest bandwidths yet reported for GaN LEDs. These devices are also integrated with a complementary metal-oxide-semiconductor (CMOS) driver array chip, allowing for simple computer control of individual micro-LED pixels. The bandwidth of the integrated micro-LED/CMOS pixels is shown to be up to 185 MHz; data transmission at bit rates up to 512 Mbit/s is demonstrated using on-off keying non return-to-zero modulation with a bit-error ratio of less than 1 X 10(-10) using a 450 nm-emitting 24 mu m diameter CMOS-controlled micro-LED. As the CMOS chip allows for up to 16 independent data inputs, this device demonstrates the potential for multi-Gigabit/s parallel data transmission using CMOS-controlled micro-LEDs.
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机译：我们报告了基于III氮化物的微像素化发光二极管的8 x 8阵列中单个像素的高频调制，该阵列中的像素直径范围为14到84μm。器件的峰值发射波长分别为370、405、450和520 nm。较小面积的微型LED像素通常比较大面积的微型LED像素具有更高的调制带宽，这归因于其以较高电流密度驱动的能力。这些设备的最高光学-3 dB调制带宽显示超过400 MHz，据我们所知，这是GaN LED迄今为止报道的最高带宽。这些设备还与互补金属氧化物半导体（CMOS）驱动器阵列芯片集成在一起，从而允许对单个micro-LED像素进行简单的计算机控制。集成的micro-LED / CMOS像素的带宽显示高达185 MHz。使用开关键控非归零调制，使用发射450 nm的24μm误码率小于1 X 10（-10）的比特率，证明了高达512 Mbit / s比特率的数据传输直径CMOS控制的微型LED。由于CMOS芯片最多允许16个独立的数据输入，因此该器件展示了使用CMOS控制的微型LED进行数千兆位并行数据传输的潜力。
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