60 GHz GaAs MMIC mixers with integrated LO buffer

摘要

Using the 0.15 µm GaAs mHEMT process from WIN semiconductors, two 60 GHz down-conversion mixers have been designed, processed and measured. Both designs include a LO buffer amplifier to allow for a reduced external LO power level. With an LO power of +10 dBm, the measured RF input match is better than -15 dB at 60 GHz and the conversion loss is below 8 dB at 2 GHz intermediate frequency.