Electrical and structural properties ofLow-temperature-grown in0.53Ga0.47ason GaAs using an inGaAlAs metamorphic buffer

摘要

Electrical and structural properties of low-temperature-grown In0.53Ga0.47As (LT-InGaAs) on GaAs using an InGaAlAs metamorphic buffer (M-buffer) were studied. Dependence of carrier lifetime of the LT-InGaAs on post thermal annealing was also investigated. Utilization of residual dislocation in the LT-InGaAs on the M-buffer was effective in reducing the carrier lifetime, producing the carrier lifetime of 2.14 ps that is comparable to that of the Be-doped LT-InGaAs.