III-V complementary HIGFET technology for low power microwave and high speed/low power digital integrated circuits

摘要

A self aligned complementary HIGFET technology has been developed for high speed/low power digital and microwave analog applications. The process uses 9 lithographic steps including two level of interconnect metal. Typical transconductances of 290 mS/mm and 65 mS/mm are acheived on lum gate length N and P-channel devices respectively. 0.5 um gate length N-HIGFET show a Ft of 40 GHz and an intrinsic Fc of 80 GHz. These devices show promise for incorporation in complementary digital, MMIC and RF power circuits.