Design and characterization of monolithic millimeter-wave active and passive components, low-noise and power amplifiers, resistive mixers, and radio front-ends

摘要

This thesis focuses on the design and characterization of monolithic active and passive components, low-noise and power amplifiers, resistive mixers, and radio front-ends for millimeter-wave applications. The thesis consists of 11 publications and an overview of the research area, which also summarizes the main results of the work. In the design of millimeter-wave active and passive components the main focus is on realized CMOS components and techniques for pushing nanoscale CMOS circuits beyond 100 GHz. Test structures for measuring and analyzing these components are shown. Topologies for a coplanar waveguide, microstrip line, and slow-wave coplanar waveguide that are suitable for implementing transmission lines in nanoscale CMOS are presented. It is demonstrated that the proposed slow-wave coplanar waveguide improves the performance of the transistor-matching networks when compared to a conventional coplanar waveguide and the floating slow-wave shield reduces losses and simplifies modeling when extended below other passives, such as DC decoupling and RF short-circuiting capacitors. Furthermore, wideband spiral transmission line baluns in CMOS at millimeter-wave frequencies are demonstrated. The design of amplifiers and a wideband resistive mixer utilizing the developed components in 65-nm CMOS are shown. A 40-GHz amplifier achieved a +6-dBm 1-dB output compression point and a saturated output power of 9.6 dBm with a miniature chip size of 0.286 mm². The measured noise figure and gain of the 60-GHz amplifier were 5.6 dB and 11.5 dB, respectively. The V-band balanced resistive mixer achieved a 13.5-dB upconversion loss and 34-dB LO-to-RF isolation with a chip area of 0.47 mm². In downconversion, the measured conversion loss and 1-dB input compression point were 12.5 dB and +5 dBm, respectively. The design and experimental results of low-noise and power amplifiers are presented. Two wideband low-noise amplifiers were implemented in a 100-nm metamorphic high electron mobility transistor (HEMT) technology. The amplifiers achieved a 22.5-dB gain and a 3.3-dB noise figure at 94 GHz and a 18-19-dB gain and a 5.5-7.0-dB noise figure from 130 to 154 GHz. A 60-GHz power amplifier implemented in a 150-nm pseudomorphic HEMT technology exhibited a +17-dBm 1-dB output compression point with a 13.4-dB linear gain. In this thesis, the main system-level aspects of millimeter-wave transmitters and receivers are discussed and the experimental circuits of a 60-GHz transmitter front-end and a 60-GHz receiver with an on-chip analog-to-digital converter implemented in 65-nm CMOS are shown. The receiver exhibited a 7-dB noise figure, while the saturated output power of the transmitter front-end was +2 dBm. Furthermore, a wideband W-band transmitter front-end with an output power of +6.6 dBm suitable for both image-rejecting superheterodyne and direct-conversion transmission is demonstrated in 65-nm CMOS.