High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning

摘要

This paper examines the utilization of plasma-enhanced atomic layer deposition grown AlN in the fabrication of a high-kinsulator layer on GaAs. It is shown that high-kGaAsMIS capacitors with an unpinned Fermi level can be fabricated utilizing a thin ex-situ deposited AlNpassivation layer. The illumination and temperature induced changes in the inversion side capacitance, and the maximum band bending of 1.2 eV indicates that the MIS capacitor reaches inversion. Removal of surface oxide is not required in contrast to many common ex-situ approaches.