We propose a new type of a transition edge sensor based on an Al/AlOx/Ti/AlOx/Al superconductor—insulator—superconductor—insulator—superconductor (SIS'IS) structure. It exhibits sharp dependence of zero bias resistance on temperature of the titanium absorber in the vicinity of its superconducting critical temperature. We demonstrate temperature sensitivity of the device to be 2 μK/√Hz. Noise Equivalent Power (NEP) of the device, limited by the amplifier noise, is estimated to be 4×10−17 W/√Hz at 313 mK. The tunnel junctions between superconducting leads should help to overcome the size limitation imposed by proximity effect in conventional transition edge sensors, without sacrificing the sensitivity. Besides that the input resistance of the device can be tuned in a wide range.
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机译：我们提出一种基于Al / AlOx / Ti / AlOx / Al超导体—绝缘体—超导体—绝缘体—超导体（SIS'IS）结构的新型过渡边缘传感器。在超导临界温度附近，零偏压电阻对钛吸收剂的温度表现出强烈的依赖性。我们证明该器件的温度灵敏度为2μK/√Hz。该器件的噪声等效功率（NEP）受放大器噪声的限制，在313 mK时估计为4×10-17 W /√Hz。超导引线之间的隧道结应有助于克服传统过渡边缘传感器中接近效应所造成的尺寸限制，而不会牺牲灵敏度。除此之外，该器件的输入电阻可以在很宽的范围内调节。
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