Interdigitated Back Contact n-Type Solar Cell with Black Silicon Anti-Reflecting Layer: Simulations and Experiments

摘要

In this work, we have processed as a reference n-type IBC cells with random pyramids on high quality float-zone silicon wafer. The front surface is passivated with Al2O3 grown by atomic layer deposition. The same structure is simulated with the software Silvaco ATLAS. The simulated IV-characteristic fits the experimental curve in the dark and under AM1.5G with a relative error below 1%.Previous measurements on minority carrier lifetime experiments on black silicon samples passivated with 20nm Al2O3 layer have resulted in an effective surface recombination velocity below 5 cm/s. This value was used to simulate IBC cells with black silicon by adjusting the above-mentioned ATLAS model in order to see the impact of black silicon on the solar cell efficiency.The results show an increase in short-circuit current (Isc) of 6mA and efficiency of 0.3% at normal incidence. Simulation reveals that a lower front surface recombination velocity would not significantly increase the efficiency of the cell. Furthermore, the simulations reveal that the emitter passivation is a critical parameter to increase further the efficiency of the cell.