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Tunneling and relaxation of single quasiparticles in a normal-superconductor-normal single-electron transistor

机译:正常超导体正常单电子晶体管中单个准粒子的隧穿和弛豫

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摘要

We investigate the properties of a hybrid single-electron transistor, involving a small superconducting island sandwiched between normal metal leads, which is driven by dc plus ac voltages. In order to describe its properties we derive from the microscopic theory a set of coupled equations. They consist of a master equation for the probability to find excess charges on the island, with rates depending on the distribution of nonequilibrium quasiparticles. Their dynamics follows from a kinetic equation which accounts for the excitation by single-electron tunneling as well as the relaxation and eventual recombination due to the interaction with phonons. Our low-temperature results compare well with recent experimental findings obtained for ac-driven hybrid single-electron turnstiles.
机译:我们研究了混合单电子晶体管的特性,该晶体管包含一个夹在普通金属引线之间的小超导岛,该岛由直流和交流电压驱动。为了描述其特性,我们从微观理论中导出了一组耦合方程。它们由一个用于在岛上找到过量电荷的概率的主方程组成,其速率取决于非平衡准粒子的分布。它们的动力学来自动力学方程,动力学方程解释了单电子隧穿的激发以及由于与声子的相互作用而引起的弛豫和最终复合。我们的低温结果与交流驱动的混合单电子旋转栅的最新实验结果进行了比较。

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