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Characterization of defect structures in nanocrystalline materials by X-ray line profile analysis

机译:通过X射线线轮廓分析表征纳米晶体材料中的缺陷结构

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摘要

X-ray line profile analysis is a powerful alternative tool for determining dislocation densities, dislocation type, crystallite and subgrain size and size-distributions, and planar defects, especially the frequency of twin boundaries and stacking faults. The method is especially useful in the case of submicron grain size or nanocrystalline materials, where X-ray line broadening is a well pronounced effect, and the observation of defects with very large density is often not easy by transmission electron microscopy. The fundamentals of X-ray line broadening are summarized in terms of the different qualitative breadth methods, and the more sophisticated and more quantitative whole pattern fitting procedures. The efficiency and practical use of X-ray line profile analysis is shown by discussing its applications to metallic, ceramic, diamond-like and polymer nanomaterials.
机译:X射线线轮廓分析是确定位错密度,位错类型,微晶和亚晶粒尺寸,尺寸分布以及平面缺陷(尤其是孪晶边界和堆垛层错频率)的强大替代工具。该方法在亚微米晶粒尺寸或纳米晶体材料的情况下特别有用,其中X射线线展宽是很明显的效果,并且通过透射电子显微镜通常很难观察到非常大的密度缺陷。根据不同的定性广度方法以及更复杂,更定量的整体模式拟合过程,总结了X射线线展宽的基本原理。通过讨论其在金属,陶瓷,类金刚石和聚合物纳米材料中的应用,可以显示X射线线轮廓分析的效率和实际应用。

著录项

  • 作者

    Gubicza Jenő; Ungár Tamás;

  • 作者单位
  • 年度 2007
  • 总页数
  • 原文格式 PDF
  • 正文语种 {"code":"en","name":"English","id":9}
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