M-line spectroscopic, spectroscopic ellipsometric and microscopic measurements of optical waveguides fabricated by MeV-energy N+ ion irradiation for telecom applications

摘要

Irradiation with N+ ions of the 1.5 - 3.5 MeV energy range was applied to optical waveguideudformation. Planar and channel waveguides have been fabricated in an Er-doped tungsten-telluriteudglass, and in both types of bismuth germanate (BGO) crystals: Bi4Ge3O12 (eulytine) and Bi12GeO20ud(sillenite). Multi-wavelength m-line spectroscopy and spectroscopic ellipsometry were used for theudcharacterisation of the ion beam irradiated waveguides. Planar waveguides fabricated in the Er-dopedudtungsten-tellurite glass using irradiation with N+ ions at 3.5 MeV worked even at the 1550 nmudtelecommunication wavelength. 3.5 MeV N+ ion irradiated planar waveguides in eulytine-type BGOudworked up to 1550 nm and those in sillenite-type BGO worked up to 1330 nm.