From nano voids to blisters in hydrogenated amorphous silicon

摘要

AFM and FTIR spectroscopy were applied to study thè relationship between surfaceudblisters and nanovoids in annealed hydrogenated a-Si. The influence of thè H bondingudconfiguration on thè way thè nanovoids give rise to thè blisters is discussed. Annealingudcauses an increase of thè polymers density. As they reside on thè voids walls their densityudincrease causes an increase of thè voids volume. The polymers may release H inside thèudvoids with creation of H2 gas, whose expansion, upon annealing, further contributes to thèudvolume increase of thè voids till thè formation of surface blisters.