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Hidden Markov Model Analysis of Intermediate Gating Steps Associated with the Pore Gate of Shaker Potassium Channels

机译:摇床钾通道孔闸相关的中间选通步骤的隐马尔可夫模型分析

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摘要

Cooperativity among the four subunits helps give rise to the remarkable voltage sensitivity of Shaker potassium channels, whose open probability changes tenfold for a 5-mV change in membrane potential. The cooperativity in these channels is thought to arise from a concerted structural transition as the final step in opening the channel. Recordings of single-channel ionic currents from certain other channel types, as well as our previous recordings from T442S mutant Shaker channels, however, display intermediate conductance levels in addition to the fully open and closed states. These sublevels might represent stepwise, rather than concerted, transitions in the final steps of channel activation. Here, we report a similar fine structure in the closing transitions of Shaker channels lacking the mutation. Describing the deactivation time course with hidden Markov models, we find that two subconductance levels are rapidly traversed during most closing transitions of chimeric, high conductance Shaker channels. The lifetimes of these levels are voltage-dependent, with maximal values of 52 and 22 μs at −100 mV, and the voltage dependences of transitions among these states suggest that they arise from equivalent conformational changes occurring in individual subunits. At least one subconductance level is found to be traversed in normal conductance Shaker channels. We speculate that voltage-dependent conformational changes in the subunits give rise to changes in a “pore gate” associated with the selectivity filter region of the channel, producing the subconductance states. As a control for the hidden Markov analysis, we applied the same procedures to recordings of the recovery from N-type inactivation in Shaker channels. These transitions are found to be instantaneous in comparison.
机译:四个亚基之间的协同作用有助于提高摇床钾离子通道的电压敏感性,其摇动概率为膜电位5mV变化的十倍。这些通道中的协作性被认为是由协调的结构过渡引起的,这是打开通道的最后一步。但是,某些其他通道类型的单通道离子电流记录以及我们以前的T442S突变型Shaker通道记录,除了完全打开和关闭状态外,还显示出中等电导水平。在通道激活的最后步骤中,这些子级别可能代表逐步而非协调的过渡。在这里,我们报告了缺少突变的Shaker频道的关闭过渡中类似的精细结构。用隐马尔可夫模型描述失活时间过程,我们发现在嵌合,高电导振动器通道的大多数闭合过渡过程中,两个子电导水平被快速遍历。这些电平的寿命与电压有关,在-100 mV时最大值为52和22μs,这些状态之间的跃迁的电压依赖性表明它们是由各个亚基中发生的等价构象变化引起的。发现在正常电导振荡器通道中遍历了至少一个子电导级别。我们推测,亚基中依赖电压的构象变化会引起与通道的选择性滤光片区域相关的“孔门”的变化,从而产生亚导态。作为隐藏马尔可夫分析的控制,我们将相同的过程应用于摇床通道中N型灭活的恢复记录。比较起来,发现这些转变是瞬时的。

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