This dissertation details the synthesis, characterization, and application of low-pressure chemical vapor deposited (LPCVD) Aluminum Silicon Nitride (Al x Siy Nz ) dielectrics to AlGaN/GaN based high electron mobility transistors (HEMTs). A detailed study of the effect on A fabrication process for such devices utilizing the Al x Siy Nz passivation is presented, and their performance at frequencies ranging from DC to the microwave is compared to devices utilizing more traditional Siy Nz films for the same purpose. As AlGaN/GaN HEMT technology has matured, much focus has been placed on the passivation dielectric itself, as many parasitic device mechanisms are directly influenced by it. Metrics such as breakdown voltage, efficiency, and high-frequency dispersion are all greatly affected by the type of passivation applied. In this work the application of LPCVD Al x Siy Nz films as AlGaN/GaN HEMT passivants is presented and shown to yield superior devices to ones passivated with similarly deposited Siy Nz dielectrics. Breakdown voltage, power added efficiency (PAE), output power density were all measured to be superior on the Al x Siy Nz passivated devices when measured under large-signal conditions at 10 GHz.
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机译：本文详细介绍了低压化学气相沉积（LPCVD）氮化铝硅（Al x Siy Nz）电介质的合成，表征及其在基于AlGaN / GaN的高电子迁移率晶体管（HEMT）中的应用。给出了对使用Al x Siy Nz钝化的此类器件的制造工艺的影响的详细研究，并将其在从DC到微波的频率范围内的性能与出于相同目的使用更传统的Siy Nz膜的器件进行了比较。随着AlGaN / GaN HEMT技术的成熟，钝化电介质本身已成为许多关注的焦点，因为许多寄生器件机制都直接受其影响。击穿电压，效率和高频色散等指标都受到所应用钝化类型的极大影响。在这项工作中，介绍了LPCVD Al x Siy Nz膜作为AlGaN / GaN HEMT钝化剂的应用，并显示出比用类似沉积的Siy Nz电介质钝化的器件更好的器件。当在10 GHz的大信号条件下测量时，击穿电压，功率附加效率（PAE），输出功率密度在Al x Siy Nz钝化器件上均被测量为优越。
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