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MICRO AND MILLIMETER WAVE CIRCUIT DESIGN IN SILICON WITH CONSIDERATIONS FOR NOISE REDUCTION AND ON-CHIP PASSIVE ELEMENTS

机译:考虑了降噪和片上无源元件的硅微和毫米波电路设计

摘要

Amid the exponentially growing demand of wireless multimedia applications,the need for exceptionally high performance communication devices has leapt to theforefront of electronic design. Advances in the speed of the silicon transistor andincreased complexity of the integrated circuit metallization stack, along withsophisticated Electro-Magnetic (EM) simulation software has fortified the capabilityto meet new and seemingly unrelenting requirements on a platform common to mostconsumer electronics.A comprehensive design approach for implementing micro and millimeterwave wireless transceiver front-end circuits is proposed. The design methodologyexploits the aforementioned advances to ensure successful implementation of radiofrequency circuits operating anywhere from 2-100 GHz in both standard siliconCMOS and silicon germanium (SiGe) BiCMOS technologies. In this dissertation themost substantial work performed is on the design and characterization of a variety oflow noise amplifiers (LNAs). In the LNA arena, a new figure-of-merit (FOM)equation is proposed. Other successful demonstrations of transceiver circuits are alsocovered such as a direct down converter featuring an active balun at 94 GHz, andradio frequency identification (RFID) tags with an active transmitter at 24 GHz and 60GHz. The methodology is not limited to the above circuits. It can be applied to amyriad of other circuits where the operating frequency is high, noise must be curtailedand the dimensions of passive structures are comparable to the signal wavelength.Many of the techniques employed are intended to combat the limitations of thesilicon substrate; even beyond the frequency limitations of the devices, and towardsovercoming and in some cases exploiting the parasitic effects of interconnect wiring atincreased frequencies. Simulation and Measurement results from the circuits arepresented and an integrated simulation environment is proposed to simplify the designflow. Several successful hardware demonstrations confirm the validity of theproposed design methodology. Summaries are given at the end of each chapter andfuture research direction is highlighted at the end of the dissertation.
机译:在无线多媒体应用的指数增长中,对超高性能通信设备的需求已跃升至电子设计的前沿。硅晶体管速度的提高和集成电路金属化堆栈的复杂性的提高,再加上先进的电磁(EM)仿真软件,增强了在大多数消费类电子产品通用的平台上满足新的,看似不懈的要求的能力。提出了实现微波毫米波无线收发器前端电路的方案。该设计方法论充分利用了上述优势,以确保成功实现在标准SiliconCMOS和锗锗(SiGe)BiCMOS技术中工作于2-100 GHz范围内的射频电路。在本文中,所进行的最实质性的工作是对各种低噪声放大器(LNA)的设计和表征。在LNA领域,提出了一个新的品质因数(FOM)方程。还发现了收发器电路的其他成功演示,例如具有94 GHz有源平衡-不平衡转换器的直接下变频器以及具有24 GHz和60GHz有源发射机的射频识别(RFID)标签。该方法不限于以上电路。它可以用于许多其他工作频率较高,必须减少噪声且无源结构的尺寸可与信号波长相比的电路。所采用的许多技术旨在克服硅衬底的局限性。甚至超出了设备的频率限制,并克服了互连布线在频率增加时的寄生效应,并在某些情况下利用了寄生效应。给出了电路的仿真和测量结果,并提出了集成仿真环境以简化设计流程。几次成功的硬件演示证实了所提出的设计方法的有效性。每章结尾给出了总结,并在论文的结尾强调了未来的研究方向。

著录项

  • 作者

    Alvarado Javier;

  • 作者单位
  • 年度 2008
  • 总页数
  • 原文格式 PDF
  • 正文语种 en_US
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