Contribution of d-band electrons to ballistic transport and scattering during electron-phonon nonequilibrium in nanoscale Au films using an ab initio density of states

摘要

Electron-interface scattering during electron-phonon nonequilibrium in thin films creates another pathway for electron system energy loss as characteristic lengths of thin films continue to decrease. As power densities in nanodevices increase, excitations of electrons from sub-conduction-band energy levels will become more probable. These sub-conduction-band electronic excitationssignificantly affect the material’s thermophysical properties. In this work, the role of d-band electronic excitations is considered in electron energy transfer processes in thin Au films. The electronic structure and density of states for gold are calculated using a plane wave pseudopotentialdensity function approach. In thin films with thicknesses less than the electron mean free path, ballistic electron transport leads to electron-interface scattering. The ballistic component of electron transport is studied by a ballistic-diffusive approximation of the Boltzmann transport equation with input from ab initio calculations. The effects of d-band excitations on electron-interface energytransfer are analyzed during electron-phonon nonequilibrium after short pulsed laser heating in thin films.