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Deposited Silicon Photonics: Optical Interconnect Devices In Polycrystalline Silicon

机译:沉积硅光子学:多晶硅中的光学互连器件

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摘要

Silicon photonics has tremendous potential to provide high-bandwidth and low-power data communication for applications such as computing and telecommunication, over length scales ranging from 100 kilometers over fiber to centimeter-length on-chip waveguides. Many silicon photonic building blocks have been demonstrated to date, but critical work remains to determine the best approaches for integrating together silicon photonics with microelectronics. In this thesis, I explore a novel method for integration of silicon photonics on the CMOS platform by using a deposited material: polycrystalline silicon. I will show the first demonstrations of electrically-active optical filters, modulators, and photodetectors in this material. In principle, this material platform would allow for the integration of silicon photonic devices and systems on top of any substrate, including complex CMOS and memory chips or even glass and plastic substrates. In Chapter 1, I introduce the state-of-the-art in silicon photonics, describe several integration schemes under development, and introduce the idea of using deposited materials. In Chapter 2, I demonstrate the use of polysilicon to make integrated microring resonators, and show the integration of different silicon materials together. Chapter 3 discusses the use of polysilicon as both an optical waveguiding layer and an electrode material in slot waveguides for the application of light emitters. Chapter 4 demonstrates the use of a pump-probe experiment to measure the free carrier lifetime in the material and demonstrate all-optical modulation. In Chapter 5, I demonstrate the first high-speed integrated electro-optic modulator in polysilicon, a necessary device for optical transmitters. In Chapter 6, I show how defects inside the same material enable integrated photodetectors at near-infrared telecommunication wavelengths. Chapter 7 shows initial results in adapting the material processing for lower temperatures, necessary for integration on top of CMOS. Finally Chapter 8 concludes with an outlook for the field.
机译:硅光子技术具有巨大的潜力,可以为诸如计算和电信之类的应用提供高带宽和低功率的数据通信,其长度范围从光纤上的100公里到厘米长的片上波导。迄今为止,已经证明了许多硅光子构建基块,但是仍然需要进行关键工作来确定将硅光子学与微电子技术集成在一起的最佳方法。在本文中,我探索了一种使用沉积材料:多晶硅在CMOS平台上集成硅光子的新方法。我将展示这种材料中的电有源滤光片,调制器和光电探测器的首次演示。原则上,该材料平台将允许在任何基板之上集成硅光子器件和系统,包括复杂的CMOS和存储芯片,甚至玻璃和塑料基板。在第一章中,我介绍了硅光子学的最新技术,描述了几种正在开发的集成方案,并介绍了使用沉积材料的想法。在第二章中,我演示了如何使用多晶硅制造集成的微环谐振器,并展示了不同硅材料的集成。第3章讨论了在缝隙波导中使用多晶硅作为光波导层和电极材料,以用于发光体的应用。第4章演示了如何使用泵浦探针实验来测量材料中的自由载流子寿命并演示全光调制。在第5章中,我演示了多晶硅中的第一个高速集成电光调制器,这是光发送器的必要设备。在第6章中,我将说明同一材料内部的缺陷如何使集成光电探测器在近红外电信波长下工作。第7章显示了使材料工艺适应较低温度的初步结果,这是在CMOS顶部集成所需的。最后,第8章总结了该领域的前景。

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    Preston Kyle;

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  • 年度 2011
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