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VUV detection in large-area avalanche photodiodes as a function of temperature

机译:大面积雪崩光电二极管中的VUV检测与温度的关系

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摘要

The response of a Peltier-cooled large-area avalanche photodiode to VUV-light is investigated as a function of the operation temperature. The reduction of the temperature down to 5°C will improve both photodiode light-level detection limit and statistical fluctuations; further temperature reduction will not result in improved performance. Optimum operation characteristics are already achieved for gains around 100 and do not depend significantly on the operation temperature. The relative variation of the gain with temperature increases with the biasing voltage presenting values that are almost a factor of two higher than for visible light detection.
机译:研究了珀耳帖冷却的大面积雪崩光电二极管对VUV光的响应,该响应是工作温度的函数。将温度降低到5°C将同时改善光电二极管的光水平检测极限和统计​​波动;进一步降低温度不会改善性能。增益约为100时已达到最佳工作特性,并且与工作温度无关。增益随温度的相对变化随偏置电压的出现值而增加,该值几乎是可见光检测值的两倍。

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