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A new integrated photosensor for gas proportional scintillation counters based on the gas electron multiplier (GEM)

机译:基于气体电子倍增器(GEM)的用于气体比例闪烁计数器的新型集成光电传感器

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摘要

The performance of a novel integrated photosensor for use in a xenon gas proportional scintillation detector is described. Earlier integrated photo-sensor designs were limited in charge gains due to the onset of electrical breakdown, which was ascribed to optical positive feedback from scintillation photons produced in the charge amplification stage. The present design uses a gas electron multiplier (GEM) composed of a 50 [mu]m thick Kapton film with copper-plated electrode surfaces on both sides and perforated with 200 [mu]m holes at a 300 [mu]m pitch. The front surface is made photosensitive with a 150-nm-thick CsI film. When an appropriate voltage is applied between the copper electrodes, the resulting electric field directs photoelectrons produced on the front surface through the holes in the GEM and onto a wire chamber where charge amplification occurs. Optical positive feedback is essentially eliminated since the charge amplification stage is optically de-coupled from the photocathode. The GEM also provides a small amount of charge gain, up to 3.3, before the electrons enter the wire chamber where charge gains up to about 103 take place. However, the measured effective quantum efficiency, namely, the number of photoelectrons traversing the GEM holes per incident 170 nm scintillation photon, as measured under present conditions, is only about 1%. A discussion of the results is presented.
机译:描述了用于氙气比例闪烁探测器的新型集成光电传感器的性能。由于电击穿的开始,早期的集成光电传感器设计在电荷增益上受到限制,这是由于电荷放大阶段产生的闪烁光子产生了光学正反馈。本设计使用由50μm厚的Kapton膜组成的气体电子倍增器(GEM),该Kapton膜的两侧均镀有铜,并以300μm的间距打有200μm的孔。用150 nm厚的CsI膜使前表面感光。当在铜电极之间施加适当的电压时,所产生的电场将在正面产生的光电子通过GEM中的孔导向并到达发生电荷放大的线室。由于电荷放大级与光电阴极光学解耦,因此基本上消除了光学正反馈。在电子进入金属丝室之前,GEM还提供了少量的电荷增益,最高可达3.3,在该金属丝室中发生的电荷增益高达103。但是,在当前条件下测得的有效量子效率,即每个入射170 nm闪烁光子穿过GEM孔的光电子数仅约为1%。讨论了结果。

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