首页> 外文OA文献 >Hierarchical Simulation Method for Total Ionizing Dose Radiation Effects on CMOS Mixed-Signal Circuits
【2h】

Hierarchical Simulation Method for Total Ionizing Dose Radiation Effects on CMOS Mixed-Signal Circuits

机译:CMOS混合信号电路上总电离剂量辐射效应的分层仿真方法

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。
获取外文期刊封面目录资料

摘要

Total ionizing dose (TID) radiation effects modeling and simulation on digital, analog and mixed signal systems remains a significant bottle neck in the development of radiation-hardened electronics. Unverified modeling techniques and the very high computational cost with today's commercial simulation tools are among the primary hindrances to the timely hardened IC design, particularly to the design in commercially available processes. SPICE-based methods have been used for total dose radiation degradation simulations. While SPICE is effective in predicting the circuit behavior under circumstances when the electrical parameters stay constant during operation, it's not effective predicting aging behavior with gradual change with time. Behavioral modeling language, such as VHDL-AMS is needed to effectively capture the time-dependent degradation in these parameters in response to environmental stresses, such as TID radiation.This dissertation describes a method for accurate and rapid TID effect simulation of complex mixed-signal circuits. The method uses a hierarchical structure where small sub-circuits, such as voltage comparators, references, etc. are simulated using SPICE. These SPICE simulations of small circuits for multiple radiation doses are used to tune behavioral VHDL-AMS models for the sub-circuits. The created behavioral models therefore contain the electrical circuit behavior combined with the radiation response. The entire combined system is then simulated using VHDL-AMS.In a simulation experiment that was used to validate the speed and accuracy of the new method, a commercial 8-bit sub-ranging analog to digital converter netlist containing more than 2000 MOS transistors was simulated with TID models using a contemporary SPICE-based method and the new method. The new method shortened the simulation time by three orders of magnitude, while accuracy remained within reasonable limits compared to the SPICE-based method. Moreover, the automated procedures for circuit node bias monitoring, TID model replacement and result collection that are included in the simulation code of the new method decreased the "hands-on" engineering work significantly. Results from an experiment where the new TID effect simulation method was used as a hardness assurance test procedure for integrated circuits designed to be operated in radiation-harsh environments are also included in this dissertation.
机译:数字,模拟和混合信号系统上的总电离剂量(TID)辐射效应建模和仿真仍然是辐射硬化电子产品开发的重要瓶颈。当今商用仿真工具的未经验证的建模技术和极高的计算成本是及时硬化IC设计(尤其是商用工艺中的设计)的主要障碍。基于SPICE的方法已用于总剂量辐射降解模拟。尽管SPICE在操作期间电气参数保持恒定的情况下可以有效地预测电路性能,但是在随时间逐渐变化的情况下,不能有效地预测老化行为。需要行为建模语言(如VHDL-AMS)来有效捕获这些参数随时间的退化,以响应环境应力(如TID辐射)。本文描述了一种精确,快速地模拟复杂混合信号的TID效果的方法。电路。该方法使用分层结构,其中使用SPICE模拟了较小的子电路,例如电压比较器,参考电压等。这些针对多个辐射剂量的小型电路的SPICE仿真用于调整子电路的行为VHDL-AMS模型。因此,所创建的行为模型包含结合了辐射响应的电路行为。然后使用VHDL-AMS对整个组合系统进行仿真。在用于验证新方法的速度和准确性的仿真实验中,使用了包含2000多个MOS晶体管的商用8位细分模数转换器网表。使用基于SPICE的现代方法和新方法,用TID模型进行仿真。与基于SPICE的方法相比,该新方法将仿真时间缩短了三个数量级,同时精度保持在合理的范围内。此外,新方法的仿真代码中包含的用于电路节点偏置监视,TID模型替换和结果收集的自动化程序,大大减少了“动手”工程工作。本文还包括将新的TID效应模拟方法用作设计用于辐射恶劣环境下的集成电路的硬度保证测试程序的实验结果。

著录项

  • 作者

    Mikkola Esko Olavi;

  • 作者单位
  • 年度 2008
  • 总页数
  • 原文格式 PDF
  • 正文语种 EN
  • 中图分类

相似文献

  • 外文文献
  • 中文文献
  • 专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号