Total-dose gain degradation in modern bipolar transistors.

摘要

The experimentally observed trends in the total-dose gain-degradation response of modern, BiCMOS compatible bipolar transistors are presented. A model for the post-irradiation excess base current is described. The model is applied to separately calculate the two radiation-induced damage densities: the net oxide charge density and the midgap-level interface-trap density. Hardness assurance testing recommendations are made based on the observed experimental trends.