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COMPUTER-AIDED DESIGN OF THERMIONIC INTEGRATED CIRCUIT ACTIVE DEVICES.

机译:热集成电路有源设备的计算机辅助设计。

摘要

Two computer-aided design methods are described in this dissertation for the design of Thermionic Integrated Circuits (TIC). Such circuits combine vacuum tube techniques with modern integrated circuit techniques to produce microminiature vacuum tube circuits, with possibly hundreds of vacuum triodes on a single substrate. The first method described in the line charge approximation technique in which the TIC devices are modelled as collections of line charges. A TIC is produced by evaporating metal electrodes on one or two sapphire substrates. The entire structure is heated to about 850°C so that electrons are emitted from the cathode electrodes to travel to the plate electrodes as in a conventional vacuum triode. The line charge approximation method is easy to implement and provides a simple means of satisfying the sapphire dielectric boundary conditions of the TIC basic problems, which are electrostatics problems since space charge effects are neglected. The method requires only a single matrix inversion and is a finite element Green's function approach. The method uses no iteration as in previous TIC analysis methods. Later as the development of TIC devices proceeded further it was found that conducting shields had to be placed over the unused sapphire surface so that the basic problem became a metal box problem. For this case a second method was developed called the step and ramp function method in which each electrode is modelled by a step function, which is the electric field solution for a potential step on a zero potential boundary. A superposition of these step functions models the TIC electrodes. The method provides direct calculation of the electric fields from equations and requires no iteration or matrix inversion. The potential variation between electrodes is modelled by linear potential functions called ramps. A superposition of steps and ramps completely specifies a TIC structure. The method does not solve for the case of electrodes which are elevated above substrates. For this case a modified line charge method was developed but not implemented.
机译:本文介绍了两种计算机辅助设计方法,用于热电子集成电路的设计。这种电路将真空管技术与现代集成电路技术相结合,以生产微型真空管电路,在单个基板上可能具有数百个真空三极管。线电荷近似技术中描述的第一种方法,其中将TIC器件建模为线电荷的集合。 TIC是通过蒸发一个或两个蓝宝石衬底上的金属电极而产生的。整个结构被加热到大约850°C,以使电子从阴极电极发射出来并像传统的真空三极管一样传播到平板电极。线电荷近似方法易于实施,并且提供了满足TIC基本问题的蓝宝石介电边界条件的简单方法,该基本问题是静电问题,因为忽略了空间电荷效应。该方法仅需单个矩阵求逆,并且是有限元格林函数方法。该方法不像以前的TIC分析方法那样使用迭代。后来,随着TIC器件的进一步发展,人们发现必须在未使用的蓝宝石表面上放置导电屏蔽层,这样基本问题就变成了金属盒问题。对于这种情况,开发了第二种方法,称为步进和斜坡函数方法,其中,每个电极都通过阶跃函数建模,阶跃函数是零电位边界上的电位阶跃的电场解。这些阶跃函数的叠加为TIC电极建模。该方法可以根据方程式直接计算电场,并且不需要迭代或矩阵求逆。电极之间的电势变化通过称为斜坡的线性电势函数建模。阶梯和斜坡的叠加完全指定了TIC结构。该方法不能解决在基板上方抬高电极的情况。对于这种情况,开发了一种改进的线路收费方法,但未实施。

著录项

  • 作者

    SCHOENEMAN DONALD WARREN.;

  • 作者单位
  • 年度 1985
  • 总页数
  • 原文格式 PDF
  • 正文语种 en
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