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ROBUST DEVICE MODELING WITH PROCESS VARIATION CONSIDERATION AND DIMENSION REDUCTION TECHNIQUES

机译:具有过程变化考虑和尺寸缩减技术的鲁棒设备建模

摘要

Nowadays the highest device integration affects the design process in several ways. The process variations (PV) significantly impact the circuit performance. As a consequence, a major consideration is determining the relation of the production yield to the technology based manufacturing variations. The traditional Monte Carlo based sampling analysis became computationally not effective due to employing complex device models with the large parameter set. The higher device integration requires dealing with numerous local and global parameters and can bottleneck the efforts of achieving fast design cycles.Statistical analysis can be facilitated by direct relation estimation a of circuit metrics to the set of PV parameters. The traditional transistor models use a large number of parameters and equations but various performance factors are possible to be related to small parameter set. A new macro model is proposed for CMOS complementary gates, where all static and dynamic characteristics are related to set of Finite Points of IV device curves. All timing and power related quantities can be predicted by evaluating the model equations. The dynamic characterization relies on charge distribution at each node. The affect of all PV is represented with characterizing the FP sensitivity. In overall the new gate model employ same computational structure for different devices in far more simple computational form.Large scale circuit analysis based on the FP models can be used for estimation of various global performance parameters. Timing performance (STA) is calculated from node to node, where at each step a new set of parameters (including PV) are introduced. Motivated by the limitations the traditional PCA, we simplify the overall computational cost with new efficient reduction technique. It turned out that the input output correlation of performance-parameters model is essential information for reduction. If the model is unknown, Sliced Inverse Regression (SIR) technique can be used to determine the Effective Reduction Space (e.d.r.). Optionally if the empiric performance analytic expression is known, the e.d.r. is found by Principle Hessian Method. In theoretical aspect the inverse reduction technique reduces parameters in the sense of their statistical significance.
机译:如今,最高的设备集成度以多种方式影响设计过程。工艺变化(PV)会严重影响电路性能。因此,主要考虑因素是确定生产产量与基于技术的制造变化之间的关系。传统的基于蒙特卡洛的采样分析由于采用带有大参数集的复杂设备模型而在计算上变得无效。更高的设备集成度需要处理大量的局部和全局参数,并且可能成为实现快速设计周期的瓶颈。通过将电路指标与PV参数集的直接关系估计a可以促进统计分析。传统的晶体管模型使用大量的参数和方程式,但是各种性能因素可能与较小的参数集有关。针对CMOS互补门,提出了一个新的宏模型,其中所有静态和动态特性都与IV器件曲线的有限点集有关。通过评估模型方程,可以预测所有与时序和功率相关的量。动态表征依赖于每个节点上的电荷分布。所有PV的影响均通过表征FP灵敏度来表示。总的来说,新的门模型对不同的器件采用相同的计算结构,但计算形式却更为简单。基于FP模型的大规模电路分析可用于估算各种全局性能参数。在节点之间计算时序性能(STA),在每个步骤中引入新的一组参数(包括PV)。由于传统PCA的局限性,我们使用新的高效归约技术简化了总体计算成本。事实证明,性能参数模型的输入输出相关性是简化的必要信息。如果模型未知,则可以使用切片逆回归(SIR)技术确定有效缩减空间(e.d.r.)。可选地,如果经验性能分析表达式是已知的,则e.d.r。通过Pessional Hessian方法找到。从理论上讲,逆归约技术从参数的统计意义上减少参数。

著录项

  • 作者

    Mitev Alexander;

  • 作者单位
  • 年度 2009
  • 总页数
  • 原文格式 PDF
  • 正文语种 EN
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