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Electrical characterization and plasma impedance measurements of a RF plasma etch system

机译:RF等离子体蚀刻系统的电特性和等离子体阻抗测量

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摘要

A modified Tegal MCR-1 plasma etch system has been electrically characterized, and the plasma impedance has been measured at 13.56MHz. Important aspects of radio-frequency (RF) impedance measurements are addressed as they pertain to the measurement of the plasma impedance. These include: transmission line effects, magnitude and phase errors of the measurement probes, and the intrinsic impedance of the empty plasma chamber. Plasma harmonics are discussed, and a technique for measuring the plasma impedance at harmonic frequencies is presented. Transients in the plasma impedance are observed during the first 5 minutes after the plasma is initiated, and represent a decrease in the plasma impedance. Residual gas analysis (RGA) confirms the presence of H₂O in the plasma. The H₂O ion current measured by RGA shows a downward transient similar to the impedance transients, suggesting a possible relationship between H₂O and the impedance transients. A possible explanation for these impedance transients is presented.
机译:一种改进的Tegal MCR-1等离子体蚀刻系统已经进行了电气表征,并且等离子体阻抗已在13.56MHz处测量。涉及射频(RF)阻抗测量的重要方面,因为它们与等离子体阻抗的测量有关。其中包括:传输线效应,测量探针的幅度和相位误差,以及空等离子体腔的固有阻抗。讨论了等离子体谐波,并提出了一种在谐波频率下测量等离子体阻抗的技术。在启动等离子体后的前5分钟内观察到等离子体阻抗的瞬变,表示瞬态等离子体阻抗的减小。残留气体分析(RGA)确认等离子体中存在H 2O。用RGA测量的H 2 O离子电流显示出类似于阻抗瞬变的向下瞬变,表明H 2 O和阻抗瞬变之间可能存在关系。给出了这些阻抗瞬变的可能解释。

著录项

  • 作者

    Roth Weston Charles 1970-;

  • 作者单位
  • 年度 1995
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  • 原文格式 PDF
  • 正文语种 en_US
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