This thesis covers useful methods for the identification of atomically thin molybdenum disulfide (MoS₂) flakes, outlines fabrication steps for transistors from identified monolayer MoS₂ samples, and details several potential measurements from such transistors. Identification techniques covered include atomic force microscopy, Raman analysis, and photoluminescence measurements of MoS₂. Detailed manufacturing procedures for different types of transistor devices are presented, beginning from large, bulk MoS₂ crystals, proceeding to wiring and testing of functional devices. Although transport measurements are not provided, all necessary theory and fabrication steps are covered to begin such measurements quickly from a basic initial setup.
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