Solid phase crystallization of an amorphous silicon (a-Si) film stressed by a Si3N4 cap was studied by laser Raman spectroscopy. The a-Si films were deposited on Si3N4 (50 nm)/Si(100) substrate by rf sputtering. The stress in an a-Si film was controlled by thickness of a Si3N4 cap layer. The Si3N4 films were also deposited by rf sputtering. It was observed that the crystallization was affected by the stress in a-Si films introduced by the Si3N4 cap layer. The study suggests that the elastic stress increases with crystallization due to the smaller elastic modulus of a-Si with respect to crystalline silicon (c-Si). It is most reasonable to think that the elastic stress does not relax and that the elastic energy increased with crystallization because the elastic modulus of a-Si is smaller than that of c-Si. The experimental data was fitted by this model and the difference of the enthalpy ΔHac between a-Si and c-Si which is the latent heat of crystallization obtained by the fitting showed good coincidence with the previously reported value.
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机译：通过激光拉曼光谱研究了通过Si3N4帽应力作用的非晶硅（a-Si）膜的固相结晶。通过射频溅射将a-Si膜沉积在Si3N4（50 nm）/ Si（100）衬底上。通过Si 3 N 4盖层的厚度来控制a-Si膜中的应力。还通过射频溅射沉积了Si3N4膜。观察到结晶受到Si3N4盖层引入的a-Si膜中应力的影响。研究表明，由于a-Si相对于晶体硅（c-Si）的弹性模量较小，弹性应力随结晶度的增加而增加。最合理的理由是，由于a-Si的弹性模量小于c-Si的弹性模量，因此弹性应力不会松弛并且弹性能随结晶而增加。通过该模型拟合实验数据，并且通过拟合获得的结晶潜热即a-Si和c-Si之间的焓差ΔHac显示出与先前报道的值良好的一致性。
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