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Thermal Degradation Mechanism of Al3Hf Anodized Thin Film Capacitors Prepared at Low Anodization Voltage

机译：低阳极氧化电压制备的Al3Hf阳极氧化薄膜电容器的热降解机理

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尾関雅彦; 山根美佐雄; 佐々木克孝; 阿部良夫; 柳沢英人; 川村みどり; Ozeki Masahiko; Yamane Misao; Sasaki Katsutaka; Abe Yoshio; Yanagisawa Hideto; Kawamura Midori;
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1. Dielectric Properties of Zr-AI Anodized Thin Film Capacitors Prepared Using Al-Doped Zr Alloy Films [J] . Hidefumi Kimizaki, Satoko Shinkai, Katsutaka Sasaki, Japanese journal of applied physics . 2010,第10期

机译：Al掺杂Zr合金膜制备Zr-AI阳极氧化薄膜电容器的介电性能
2. Voltage-current characteristics of heterojunctions prepared from anodic-oxidized ZnO films and RF-sputtered Pr- Co-O thin films [J] . Y.Sato, T.Shindo 日本セラミックス協会学術論文誌 . 1998,第0期

机译：由阳极氧化的ZnO薄膜和RF溅射的Pr-Co-O薄膜制备的异质结的电压-电流特性
3. Voltage-current characteristics of heterojunctions prepared from anodic-oxidized ZnO films and RF-sputtered Pr- Co-O thin films [J] . Y.Sato, T.Shindo 日本セラミックス協会学術論文誌 . 1998,第0期

机译：由阳极氧化的ZnO薄膜和RF溅射的Pr-Co-O薄膜制备的异质结的电压-电流特性
4. Fabriccation of Ta_2O_5 Thin Films by Anodic Oxidation of Tantalum Nitride and Tantalum Silicide: Growing Mechanisms, Electrical Characterization and ULSI M-I-M Capacitor Performances [C] . S.Duenas, H.Castan, J.Barbolla, Symposium on Ultrathin SiO_2 and High-K Materials for ULSI Gate Dielectrics held April 5-8, 1999, San Francisco, California, U.S.A. . 1999

机译：氮化钽和硅化钽的阳极氧化制备Ta_2O_5薄膜：生长机理，电学特性和ULSI M-I-M电容器性能
5. Thin film integrated capacitors with sputtered-anodized niobium pentoxide dielectric for decoupling applications. [D] . Jacob, Susan. 2009

机译：用于去耦应用的具有溅射阳极氧化五氧化铌电介质的薄膜集成电容器。
6. Growth and Etch Rate Study of Low Temperature Anodic Silicon Dioxide Thin Films [O] . Akarapu Ashok, Prem Pal -1

机译：低温阳极氧化硅薄膜的生长和腐蚀速率研究
7. A Study on the Hear-Proof Properties of Ta2N Anodized Thin Film Capacitors Prepared at Low Anodization Voltage [O] . 佐々木克孝, 山根美佐雄, 阿部良夫, 1995

机译：在低阳极氧化电压下制备的Ta2N阳极氧化薄膜电容器的耐听性研究
8. STUDIES ON THE ANODIC POLARIZATION OF ZIRCONIUM:(Ⅰ) The Formation Field from Both High-Potential and Low-Potential Measurementsn(Ⅱ) Porosity of Very Thin Anodic Oxide Filmsn(Ⅲ) Thicknesses of Very Thin Air-formed Oxide Filmsn(Ⅳ) A Low-Potential Current-Voltage Regulator [R] . George B. Adams, Mario Maraghini, Tien-Shuey Lee 1955

机译：锆的阳极极化研究：（Ⅰ）高电位和低电位测量的形成场（Ⅱ）极薄阳极氧化膜的孔隙率（Ⅲ）极薄气化氧化膜的厚度（Ⅳ）a低电位电流电压调节器

Thermal Degradation Mechanism of Al3Hf Anodized Thin Film Capacitors Prepared at Low Anodization Voltage

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