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Intraband photoconductivity due to light holes and heating of carriers in p-type Ge by submillimeter laser excitation

机译：亚毫米激光激发p型Ge中载流子和载流子加热引起的带内光电导

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Ganichev Sergey; Emelyanov S.; Yaroshetskii I.;
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年度 1987
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1. Nonlinear gain suppression in quantum-well lasers due to carrier heating: the roles of carrier energy relaxation, electron-hole interaction, and Auger effect [J] . Wang J., Schweizer H. IEEE Photonics Technology Letters . 1996,第11期

机译：载流子加热导致量子阱激光器中的非线性增益抑制：载流子能量弛豫，电子-空穴相互作用和俄歇效应的作用
2. A quantitative comparison of the classical rate-equation model with the carrier heating model on dynamics of the quantum-well laser: the role of carrier energy relaxation, electron-hole interaction, and Auger effect [J] . Jian Wang, Schweizer H.C. IEEE Journal of Quantum Electronics . 1997,第8期

机译：经典速率方程模型与载流子加热模型对量子阱激光器动力学的定量比较：载流子能量弛豫，电子-空穴相互作用和俄歇效应的作用
3. The effect of carrier diffusion on laser heating of lightly damaged semiconductors [J] . Journal of Applied Physics . 1980,第5期

机译：载流子扩散对轻度损坏的半导体的激光加热的影响
4. Intraband carrier relaxation in semiconductor quantum rods: Competition between phonon-assisted cooling and Auger heating [C] . M. Achermann, A. P. Bartko, J. A. Hollingsworth, Quantum Electronics and Laser Science Conference . 2005

机译：半导体量子棒中的IntrAband载体弛豫：校友辅助冷却和螺旋钻加热之间的竞争
5. Particle dynamics and energy transfer in high-speed quantum well lasers: Effects of spectral hole burning, carrier heating, and carrier transport [D] . Tsai, Chin-Yi. 1995

机译：高速量子井激光器中的粒子动力学和能量转移：光谱燃烧，载体加热和载流子的效果
6. Ultrafast hole carrier relaxation dynamics in p-type CuO nanowires [O] . Andreas Othonos, Matthew Zervos 2011

机译：p型CuO纳米线的超快空穴载流子弛豫动力学
7. The effect of Auger heating on intraband carrier relaxation in semiconductor quantumrods [O] . Achermann, Marc, Bartko, Andrew P., Hollingsworth, Jennifer A., 2006

机译：俄歇加热对大鼠脑内载体松弛的影响半导体量子棒
8. Carrier Heating and Spectral Hole Burning in Strained-Layer Quantum-Well LaserAmplifiers at 1.5 microns [R] . Hall, K. L., Lenz, G., Ippen, E. P., 1992

机译：在1.5微米的应变层量子阱激光放大器中的载流子加热和光谱孔燃烧

Intraband photoconductivity due to light holes and heating of carriers in p-type Ge by submillimeter laser excitation

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