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Aluminum Silicon Carbide Particulate Metal MatrixudComposite Development Via Stir Casting Processing

机译:碳化硅铝颗粒金属基体 ud通过搅拌铸造工艺进行复合材料开发

摘要

In this paper, conventional simple methods ofudQ1udud producing MMC with attained properties through the disudpersion of silicon carbide in the matrix were investi11udgated. To achieve these objectives two step-mixing methodud of stir casting technique has been employed. Aluminumud(99.66 %C.P) and SiC (320 and 1200 grits) were chosenudas matrix and reinforcement materials respectively. Experudiments were conducted by varying weight fraction of SiCud for 2.5 %, 5.0 %, 7.5 % and 10 %. The result indicatedud that the stir casting method was quite successful to obtainud uniform dispersion of reinforcement in the matrix. Thisud was evident by the improvement properties of compositesud over the base metal. Reinforced Aluminium Silicon Carudbide (ASC) showed increase in Young’s Modulus (E) andud hardness above the unreinforced case and marginal reducudtion of electrical conductivity was recorded for the comudposites. The silicon carbide of 1200 grits (3 μm) showedud increased Young’sModulus (E) and hardness of 1517.6Mpaud and 26.1 Hv values at 7.5% volume fraction silicon carbidewhen compared with the silicon carbide 320 grit (29 μm)Also; the electrical conductivity properties of the two grit udsizes of the Silicon Carbides were less than the base metal udfor all the volume fraction of Silicon Carbide
机译:本文研究了通过碳化硅在基体中的分散制备具有一定性能的MMC的常规简单方法。为了实现这些目的,采用了搅拌铸造技术的两步混合方法。分别选择铝 ud(99.66%C.P)和SiC(320和1200粗砂) udas基体和增强材料。通过改变SiC ud的重量分数为2.5%,5.0%,7.5%和10%来进行实验。结果表明,搅拌铸造法非常成功地获得了增强物在基体中的均匀分散。复合材料相对于母材的改进性能证明了这一点。增强铝碳化硅(ASC)的杨氏模量(E)和ud硬度均高于未增强的情况,并且复合材料的导电率略有降低。与碳化硅320砂砾(29μm)相比,体积分数为7.5%的碳化硅时,1200砂砾(3μm)的碳化硅表现出增加的杨氏模量(E)和硬度1517.6Mpa ud和26.1 Hv值;对于碳化硅的所有体积分数,两种粒度的碳化硅的电导率性能均小于贱金属。

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