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Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi

机译:GaAsBi分子束外延过程中形成的气液固驱动Bi表面液滴的表面效应

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摘要

Herein we investigate a (001)-oriented GaAs1−xBix/GaAs structure possessing Bi surface droplets capable of catalysing the formation of nanostructures during Bi-rich growth, through the vapourliquid-solid mechanism. Specifically, self-aligned “nanotracks” are found to exist trailing the Bi droplets on the sample surface. Through cross-sectional high-resolution transmission electron microscopy the nanotracks are revealed to in fact be elevated above surface by the formation of a subsurface planar nanowire, a structure initiated mid-way through the molecular-beam-epitaxy growth and embedded into the epilayer, via epitaxial overgrowth. Electron microscopy studies also yield the morphological, structural, and chemical properties of the nanostructures. Through a combination of Bi determination methods the compositional profile of the film is shown to be graded and inhomogeneous. Furthermore, the coherent and pure zincblende phase property of the film is detailed. Optical characterisation of features on the sample surface is carried out using polarised micro-Raman and micro-photoluminescence spectroscopies. The important light producing properties of the surface nanostructures are investigated through pump intensity-dependent micro PL measurements, whereby relatively large local inhomogeneities are revealed to exist on the epitaxial surface for important optical parameters. We conclude that such surface effects must be considered when designing and fabricating optical devices based on GaAsBi alloys.
机译:在本文中,我们研究了一种具有(001)取向的GaAs1-xBix / GaAs结构,该结构具有Bi表面液滴,能够通过汽液固机理催化在Bi富集生长过程中形成纳米结构。具体而言,发现自对准的“纳米径”存在于样品表面上的Bi液滴后面。通过横截面高分辨率透射电子显微镜观察,实际上通过形成亚表面平面纳米线形成了纳米轨道,该纳米表面是通过分子束外延生长的中途引发并嵌入表层的结构而形成的,通过外延过度生长。电子显微镜研究还产生了纳米结构的形态,结构和化学性质。通过Bi测定方法的组合,显示出膜的成分分布是渐变且不均匀的。此外,还详细描述了膜的相干和纯净的闪锌矿相性质。使用偏振微拉曼光谱和微光致发光光谱仪对样品表面的特征进行光学表征。通过泵浦强度相关的微PL测量研究了表面纳米结构的重要发光特性,从而揭示出对于重要的光学参数,在外延表面上存在相对较大的局部不均匀性。我们得出结论,在设计和制造基于GaAsBi合金的光学器件时,必须考虑这种表面效应。

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