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Structural and analytical characterization by scanning transmission electron microscopy of silicon-based nanostructures

机译：通过扫描透射电子显微镜对硅基纳米结构进行结构和分析表征

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A few recent applications of scanning transmission electron microscopy (STEM) methods to problems of interest for nanoelectronics are reported. They include nanometer-scaled dopant profiles by Z-contrast and strain mapping by convergent beam diffraction.

机译：报告了扫描透射电子显微镜（STEM）方法在纳米电子学中关注的问题的一些最新应用。它们包括通过Z对比得到的纳米级掺杂剂分布图以及通过会聚束衍射得到的应变图。

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Armigliato A.; Balboni R.; Parisini A.;
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年度 2007
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4. Structural and Analytical Characterization by Scanning Transmission Electron Microscopy of Silicon-based Nanostructures [C] . A. Armigliato, R. Balboni, A. Parisini Symposium Analytical Techniques for Semiconductor Materials and Process Characterization V;ALTECH 2007;Solid State Device Research Conference; 20070913-14;20070913-14;20070913-14; Munich(DE);Munich(DE);Munich(DE) . 2007

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Structural and analytical characterization by scanning transmission electron microscopy of silicon-based nanostructures

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