Boron Oxide Encapsulated Vertical Bridgman CdZnTe Crystals For X-Ray Detector Applications

摘要

CdZnTe crystals are employed for the production of room temperature X-ray detectors and as substrates for infrared detectors. However, the exploitation of CdZnTe crystals for such applications is still limited by the low single-crystalline device-grade yield of the growth process. The authors had previously shown that is possible to grow CdZnTe crystals in a vertical Bridgman configuration by means of boron oxide encapsulation. Actually, the crystals are fully encapsulated by boron oxide, thus preventing any contact between the growing crystal and the ampoule wall.