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High-Performance and Low-Power Magnetic Material Memory Based Cache Design

机译:基于高性能和低功耗磁性材料存储器的缓存设计

摘要

Magnetic memory technologies are very promising candidates to be universal memory due to its good scalability, zero standby power and radiation hardness. Having a cell area much smaller than SRAM, magnetic memory can be used to construct much larger cache with the same die footprint, leading to siginficant improvement of overall system performance and power consumption especially in this multi-core era. However, magnetic memories have their own drawbacks such as slow write, read disturbance and scaling limitation, making its usage as caches challenging.udThis dissertation comprehensively studied these two most popular magnetic memory technologies. Design exploration and optimization for the cache design from different designudlayers including the memory devices, peripheral circuit, memory array structure and micro-architecture are presented. By leveraging device features, two major micro-architectures -multi-retention cache hierarchy and process-variation-aware cache are presented to improve the write performance of STT-RAM. The enhancement in write performance results in theuddegradation of read operations, in terms of both speed and data reliability. This dissertation also presents an architecture to resolve STT-RAM read disturbance issue. Furthermore, the scaling of STT-RAM is hindered due to the required size of switching transistor. To break the cell area limitation of STT-RAM, racetrack memory is studied to achieve an even higher memory density and better performance and lower energy consumption. With dedicated elaboration, racetrack memory based cache design can achieve a siginificant area reduction and energy saving when compared to optimized STT-RAM.
机译:磁存储技术因其良好的可扩展性,零待机功率和辐射硬度而非常有望成为通用存储。具有比SRAM小得多的单元面积,磁性存储器可用于构建具有相同裸片占位面积的更大的高速缓存,从而导致整体系统性能和功耗的显着改善,尤其是在这个多核时代。然而,磁存储器有其自身的缺点,例如写入速度慢,读取干扰和缩放限制,使其用作高速缓存具有挑战性。 ud本论文全面研究了这两种最流行的磁存储器技术。提出了来自不同设计底层的缓存设计的设计探索和优化,包括存储设备,外围电路,存储阵列结构和微体系结构。通过利用设备功能,提出了两个主要的微体系结构-多保留高速缓存层次结构和可识别过程差异的高速缓存,以提高STT-RAM的写入性能。在速度和数据可靠性方面,写入性能的增强会导致读取操作的 uddegraded。本文还提出了一种解决STT-RAM读取干扰问题的体系结构。此外,由于所需的开关晶体管尺寸,阻碍了STT-RAM的缩放。为了打破STT-RAM的单元面积限制,对赛道存储器进行了研究,以实现更高的存储器密度,更好的性能和更低的能耗。通过专门的设计,与优化的STT-RAM相比,基于赛道内存的缓存设计可以实现面积的减少和节能。

著录项

  • 作者

    Sun Zhenyu;

  • 作者单位
  • 年度 2014
  • 总页数
  • 原文格式 PDF
  • 正文语种 en
  • 中图分类

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