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Improving the Reliability of Microprocessors under BTI and TDDB Degradations

机译:在BTI和TDDB降级的情况下提高微处理器的可靠性

摘要

Reliability is a fundamental challenge for current and future microprocessors with advanced nanoscale technologies. With smaller gates, thinner dielectric and higher temperature microprocessors are vulnerable under aging mechanisms such as Bias Temperature Instability (BTI) and Temperature Dependent Dielectric Breakdown (TDDB). Under continuous stress both parametric and functional errors occur, resulting compromised microprocessor lifetime. In this thesis, based on the thorough study on BTI and TDDB mechanisms, solutions are proposed to mitigating the aging processes on memory based and random logic structures in modern out-of-order microprocessors.ududA large area of processor core is occupied by memory based structure that is vulnerable to BTI induced errors. The problem is exacerbated when PBTI degradation in NMOS is as severe as NBTI in PMOS in high-k metal gate technology. Hence a novel design is proposed to recover 4 internal gates within a SRAM cell simultaneously to mitigate both NBTI and PBTI effects. This technique is applied to both the L2 cache banks and the busy function units with storage cells in out-of-order pipeline in two different ways. For the L2 cache banks, redundant cache bank is added exclusively for proactive recovery rotation. For the critical and busy function units in out-of-order pipelines, idle cycles are exploited at per-buffer-entry level.ududDifferent from memory based structures, combinational logic structures such as function units in execution stage can not use low overhead redundancy to tolerate errors due to their irregular structure. A design framework that aims to improve the reliability of the vulnerable functional units of a processor core is designed and implemented. The approach is designing a generic function unit (GFU) that can be reconfigured to replace a particular functional unit (FU) while it is being recovered for improved lifetime. Although flexible, the GFU is slower than the original target FUs. So GFU is carefully designed so as to minimize the performance loss when it is in-use. More schemes are also designed to avoid using the GFU on performance critical paths of a program execution.
机译:对于当前和未来具有先进纳米技术的微处理器,可靠性是一项根本性挑战。使用较小的栅极时,较薄的电介质和较高温度的微处理器在诸如偏置温度不稳定性(BTI)和随温度变化的介电击穿(TDDB)之类的老化机制下容易受到攻击。在持续的压力下,会同时发生参数和功能错误,从而导致微处理器寿命受损。本文在对BTI和TDDB机制的深入研究的基础上,提出了缓解现代无序微处理器中基于存储器和随机逻辑结构的老化过程的解决方案。 ud ud易受BTI诱发错误影响的基于内存的结构。在高k金属栅极技术中,当NMOS中的PBTI退化与PMOS中的NBTI一样严重时,问题将更加严重。因此,提出了一种新颖的设计来同时恢复SRAM单元内的4个内部门以减轻NBTI和PBTI效应。该技术以两种不同的方式应用于乱序流水线中的存储单元的L2缓存库和繁忙功能单元。对于L2高速缓存存储区,专门为主动恢复循环添加了冗余高速缓存存储区。对于乱序流水线中的关键和繁忙功能单元,在每个缓冲区条目级别利用空闲周期。 ud ud与基于内存的结构不同,组合逻辑结构(例如执行阶段中的功能单元)不能使用低开销冗余,以容忍由于其不规则结构而引起的错误。设计和实现了旨在提高处理器内核易受攻击的功能单元的可靠性的设计框架。该方法正在设计通用功能单元(GFU),可以对其进行重新配置以替换特定的功能单元(FU),同时对其进行恢复以提高使用寿命。尽管灵活,但GFU比原始目标FU慢。因此,对GFU进行了精心设计,以使其在使用时的性能损失降至最低。还设计了更多方案,以避免在程序执行的性能关键路径上使用GFU。

著录项

  • 作者

    Li Lin;

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  • 年度 2014
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  • 原文格式 PDF
  • 正文语种 en
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