Artificially ordered semiconductor quantum dot (QD) patterns may be used to implement functionalities such as spintronic bandgap systems, quantum simulation and quantum computing, by manipulating the interaction between confined carriers via direct exchange coupling. In this dissertation, magnetotransport measurements have been conducted to investigate the electronic orbital and spin states of directed self-assembly single- and few-Ge/SiC/Si QD devices, fabricated by a directed self-assembly QD growth technique developed by our group. Diamagnetic and Zeeman energy shifts of electrons confined around the QD have been observed from the magnetotransport experiments. A triple-barrier resonant tunneling model has been proposed to describe the electron and spin transport. The strength of the Coulomb interaction between electrons confined at neighboring QDs has been observed dependent on the dot separation, and represents an important parameter for fabricating QD-based molecules and artificial arrays, which may be implemented as building blocks for future quantum simulation and quantum computing architectures.
展开▼
机译：通过经由直接交换耦合操纵受限载流子之间的相互作用，人工排序的半导体量子点（QD）模式可用于实现诸如自旋电子带隙系统，量子模拟和量子计算之类的功能。本文采用磁输运测量方法，研究了由我们小组开发的定向自组装QD生长技术制备的定向自组装单Ge / SiC / Si QD器件的电子轨道和自旋态。限制在量子点周围的电子的反磁和塞曼能移已从磁输运实验中观察到。已经提出了三势垒共振隧穿模型来描述电子和自旋传输。已经观察到受限于相邻量子点的电子之间的库仑相互作用的强度取决于点间距，并且代表制造基于量子点的分子和人工阵列的重要参数，可以用作未来量子模拟和量子计算的基础建筑。
展开▼
