Effect of interfacial interactions on the initial growth of Cu on clean SiO2 and 3-mercaptopropyltrimethoxysilane-modified SiO2 substrates.

摘要

The effect of interfacial interactions on the initial growth of Cu on clean SiO2 and 3-mercaptopropyltrimethoxysilane (MPTMS)-modified SiO2 substrates by sputter deposition was studied using transmission electron microscopy, energy dispersive x-ray spectroscopy, and x-ray photoelectron spectroscopy. Plasma damage during sputter deposition makes surfaces of MPTMS-modified SiO2 substrates consist of small MPTMS islands several tens of nanometers in diameter and bare SiO2 areas. These MPTMS islands are composed of disordered multilayer MPTMS aggregates. The initial growth behavior of Cu on MPTMS-modified SiO2 substrates differs from that on clean SiO2 substrates, although Cu grows in three-dimensional-island mode on both of them. After a 2.5-monolayer Cu deposition on clean SiO2 substrates, spherical Cu particles were formed at a low number density of 1.3×1016 /m2 and at a long interparticle distance of 5 nm. In contrast, after the same amount of deposition on MPTMS-modified SiO2 substrates, Cu particles preferentially grow on MPTMS islands at a high number density of 3.9×1016 /m2 and at a short interparticle distance of 3 nm, but do not grow on bare SiO2 areas. The increased number density and the decreased interparticle distance indicate that Cu has a lower mobility on MPTMS islands on MPTMS-modified SiO2 substrates than on clean SiO2 substrates. This difference in Cu mobility is attributed to the enhanced interfacial interactions between Cu and S on MPTMS islands on MPTMS-modified SiO2 substrates via the formation of CuS bonds, compared with the relatively weak interfacial interactions between Cu and Si or O on clean SiO2 substrates.