Etude de la croissance et des propriétés de films minces d'AlN épitaxiés par jets moléculaires sur substrat silicium : application aux résonateurs acoustiques et perspectives d'hétérostructures intégrées sur silicium

摘要

This work deals with epitaxial growth of aluminium nitride (AlN) thin films on silicon substrates. Structural and optical properties of AlN grown by molecular beam epitaxy are studied depending on substrate orientation and surface preparation. The sound velocity of acoustic waves and piezoelectric coefficients e31 and d33 are also measured. Preliminary results on bulk acoustic wave resonators show that epitaxial AlN thin films would allow the fabrication of devices operating up to high frequencies. In the last part, we present some side results resulting to this study. In particular, it is shown how the improvement of the quality of AlN impacts properties of GaN-based heterostructures. Some prospects are highlighted regarding the fabrication of micro-nanostructures and potentialities towards integration with the silicon technology are also discussed.