Green, red and infrared Er-related emission in implanted GaN:Er and GaN:Er,O samples

摘要

Er-related luminescence near 1.54 mm ~;805 meV! is observed under below band gap excitation at4.2 K in GaN:Er and GaN:Er,O implanted samples. The spectrum of the recovered damage samplesis a multiline structure. So far, these lines are the sharpest ones reported for GaN. Well-resolvedgreen and red luminescences are observed in implanted samples. The dependence of luminescenceon the excitation energy as well as the influence of different nominal fluence and annealingconditions is discussed. Combining the results obtained from photoluminescence and Rutherfordbackscattering spectrometry, different lattice sites for the optical active Er-related centers areidentified.